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Benlin Hu, PhD Personal Details Telephone: Fax: +86(574) 8761 5986 +86(574) 8668 5134 E-mail: hubenlin@nitmte.ac.cn Address: Key Lab of Magnetic Materials and Devices Ningbo Institute of Materials Technology &. Engineering, Chinese Academy of Sciences Zhuangshi Rd. 519, Zhenhai District Ningbo, Zhejiang 315201 China Biography Sep, 2006-Unitil now Ph.D. candidate Affiliation: Institute of Material Technology & Engineering, Chinese Academy of Sciences Sep, 2002-Jun, 2006 Bachelor Major in: Chemical Engineering and Technology Harbin University of Science and Technology Research Interests Current research focuses on the following areas： Resistive random access memory based polymers. Publications 1. Benlin Hu, Fei Zhuge, Xiaojian Zhu, Shanshan Peng, Xinxin Chen, Liang Pan, Qing Yan, and Run-Wei Li. Nonvolatile Bistable Resistive Switching in a New Polyimide bearing 9-Phenyl-9H-Carbazole Pendant, Journal of Material Chemistry, accept. 2. Fei Zhuge, Benlin Hu, Congli He, Xufeng Zhou, Zhaoping Liu, Run-Wei Li *, Mechanism of nonvolatile resistive switching in graphene oxide thin films, Carbon, 49(12):3796-3802.(2011) Patents 1. Run-Wei Li, Benlin Hu, Fei Zhege, Liang Pan; RRAM cell and its preparation, Publication number: CN102185103A. 2. Run-Wei Li, Benlin Hu, Fei Zhege, Liang Pan; A type of poly(Schiff base) used as resistive switching materials , Publication number: CN102219898A. |
