Publications
Selected Publications
2011
[1] Qiwei Tian, Minghua Tang, Feiran Jiang, Yiwei Liu, Jianghong Wu, Rujia Zou, Yangang Sun, Zhigang Chen, Runwei Li and Junqing Hu, Large-scaled star-shaped α-MnS nanocrystals with novel magnetic properties. Chem. Commun.47,8100-8102.(2011);
[2] Xiaojian Zhu, Fei Zhuge, Mi Li, Kuibo Yin, Yiwei Liu,Zhenghu Zuo, Bin Chen and Run-Wei Li. Microstructure dependence of leakage and resistive switching behaviours in Ce-doped BiFeO3 thin films. J. Phys. D: Appl. Phys.44.415104.(2011);
[3] Fei Zhuge, Shanshan Peng, Congli He, Xiaojian Zhu, Xinxin Chen, Yiwei Liu and Run-Wei Li, Improvement of resistive switching in Cu/ZnO/Pt sandwiches by weakening the randomicity of the formation/rupture of Cu filaments, Nanotechnology.22,275204.(2011);
[4] Wei Ning, Zhe Qu, You-Ming Zou, Lang-Sheng Ling, Lei Zhang, Chuan-Ying Xi, Hai-Feng Du, Run-Wei Li, Yu-Heng Zhang, Giant anisotropic magnetoresistance in bilayered La2-2xSr1+2xMn2O7 (x=0.4) single crystal, Appl. Phys. Lett. 98,212503.(2011);
[5] Fei Zhuge, Benlin Hu, Congli He, Xufeng Zhou, Zhaoping Liu, Run-Wei Li *, Mechanism of nonvolatile resistive switching in graphene oxide thin films, Carbon, 49(12):3796-3802.(2011);
[6] Fei Zhuge, Run-Wei Li*, Congli He, Zhaoping Liu and Xufeng Zhou, Physics and Applications of Graphene - Experiments: Chapter 17 Non-Volatile Resistive Switching in Graphene Oxide Thin Films, InTech (2011), ISSN 978-953-307-217-3.
[7] Bin Chen, Mi Li, Yiwei Liu, Zhenghu Zuo, Fei Zhuge, Qing-Feng Zhan and Run-Wei Li. Effect of top electrodes on photovoltaic properties of polycrystalline BiFeO3 based thin film capacitors. Nanotechology. 22,195201.(2011);
[8] C. Y. Dong, D. S. Shang, L. Shi, J. R. Sun, B. G. Shen, F. Zhuge, R. W. Li, and W. Chen. Roles of silver oxide in the bipolar resistance switching devices with silver electrode. Appl. Phys. Lett. 98,072107. (2011);
[9] Hongjun Liu, Jyh-Pin Chou, Run-Wei Li, Ching-Ming Wei, and Kazushi Miki. Trimeric precursors in the formation of Al magic clusters on Si(111)-7×7 surface. Phys. Rev B. 83, 075405. (2011);
2010
[1] Xiuzhen Yu, Run-Wei Li, Toru Asaka, Kazuo Ishizuka, Koji Kimoto and Yoshio Matsui, Relationship between magnetic domain configuration and crystallographic orientation in a colossal magnetoresistive material. Journal of Electron Microscopy. 59,S95-S100.(2010);
[2] Mi Li, Fei Zhuge, Xiaojian Zhu, Kuibo Yin, Jinzhi Wang, Yiwei Liu, Congli He, Bin Chen and Run-Wei Li*, Nonvolatile resistive switching in metal/La-doped BiFeO3/Pt sandwiches. Nanotechnology, 21,425202(2010);
[3] F. Zhuge, W. Dai, C. L. He, A. Y. Wang, Y. W. Liu, M. Li, Y. H. Wu, P. Cui, and Run-Wei Li *. Nonvolatile resistive switching memory based on amorphous carbon. Appl. Phys. Lett;96,163505(2010);
[4] D. S. Shang, L. Shi, J. R. Sun, B. G. Shen, F. Zhuge, Run-Wei. Li, and Y. G. Zhao; Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing；Appl. Phys. Lett. 96,072103(2010);
[5] J. Wang, F. X. Hu, Run-Wei. Li, J. R. Sun, and B. G. Shen; Strong tensile strain induced charge/orbital ordering in (001)-La7/8Sr1/8MnO3 thin film on 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3; Appl. Phys. Lett. 96,052501(2010);
[6] J. Yang, B. Li, J. Wang, L. Chen, Run-Wei.Li, A first-principles study of adhesion of Pt layers to the NiO(100) and IrO2(110) surfaces, J. Phys: Condens. Matt. 22,015003 (2010) ;
2009
[1] C. L. He, F. Zhuge, X. F. Zhou, M. Li, G. C. Zhou, Y. W. Liu, J. Z. Wang, B. Chen, W. J. Su, Z. P. Liu*, Y. H. Wu, P. Cui, and Run-Wei Li**, Non-volatile resistive switching in graphene oxide thin films; Appl. Phys. Lett. 95, 232101(2009);
[2] X. Z. Yu, Run-Wei Li, T. Asaka, K. Ishizuka, K. Kimoto, and Y. Matsui, Possible origins of the magnetoresistance gain in colossal magnetoresistive oxide La0.69Ca0.31MnO3: Structure fluctuation and pinning effect on magnetic domain walls, Appl. Phys. Lett. 95, 092504 (2009);
[3] Run-Wei Li, H. B. Wang, X. Wang, X. Z. Yu, Y. Matsui, Z.H. Cheng, B. G. Shen, E.W. Plummer, and J. Zhang, Anomalously large anisotropic magnetoresistance in a perovskite manganite, Proceeding of the National Academic Sciences (PNAS), vol. 106, no. 34, 14224–14229, (2009);
[4] Run-Wei Li*; AFM lithography and fabrication of multifunctional nanostructures with perovskite oxides; International Journal of Nanotechnology, invited review, Vol. 6, No. 12, 1067-1085, (2009);
[5] Run-Wei Li*; A. A. Belik, Z. H. Wang, and B. G. Shen, Magnetism, transport, and specific heat of electronically phase-separated Pr0.7Pb0.3MnO3 single crystals, J. Phys. Conden. Mater. 21, 076002(2009);
Selected Patents
[1] Run-wei Li, Fei Zhuge, Aiying Wang, Congli He, Wei Dai,RRAM cell and its preparation, Application number: 200910100140.5 (authorized)
[2] Run-Wei Li, Zhaoping Liu, Fei Zhuge, Xufeng Zhou, Congli He,RRAM cell and its preparation,Application number:200910100141.x(authorized)
[3] Yiwei Liu, Run-Wei Li, Bin Chen; A kind of biosensor, Application number: 201020195995.9 (authorized).
[4] Run-Wei Li, Benlin Hu, Fei Zhege, Liang Pan; RRAM cell and its preparation, Publication number: CN102185103A.
[5] Run-Wei Li, Benlin Hu, Fei Zhege, Liang Pan; A type of poly(Schiff base) used as resistive switching materials , Publication number: CN102219898A.
[6] Yiwei Liu, Run-Wei Li, Qingfeng Zhan, Conglei Shao, Yuanzhao Wu; A knid of biosensor using immunomagnetic beads, Application number: 201110241688.9
[7] Yiwei Liu, Run-Wei Li, Qingfeng Zhan, Conglei Shao, Yuanzhao Wu; A knid of biosensor using immunomagnetic beads, Application number: 201110241688
[8] Run-Wei Li, Zhenghu Zuo, Bin Chen, YiWei Liu, Xiaojian Zhu, Huali Yang; A method to produce free-standing films of multiferroic materials, Application number:201110086403.9
[9] Run-Wei Li, Wenjing Su, Fei Zhuge, Xiaojian Zhu, A kind of Current Oscillator and its preparation method, Application number:201110113939.5
[10] Yiwei Liu, Run-Wei Li, Bin Chen; A method for deceting the antigen, Application number: 201010176884.8
[11] Run-Wei Li, Kuibo Yin, Yiwei Liu, Mi Li, Bin Chen; Resistively Random Access Memory based on the bismuth ferrite film and its fabrication, Application number: 200910099716.0;
[12] Run-Wei Li, Yiwei Liu, Kuibo Yin, Bin Chen, Mi Li; A kind of magnetism storage medium based on the multiferroic films and its write method, Application number: 200910100338.3.
[13] Fei Zhuge,Run-Wei Li. A method for High-purity boron carbide powder, Application number: 200910153736.1.
[14] Fei Zhuge, Run-Wei Li, B-C-N ternary compounds and their preparation methods, Application number:200910154290.4
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