|
Location: Home > Research > Research Groups > Magnetoelectronic Materials &.Devices > Members | |||||||
Assistant Professor Yiwei Liu Personal Details Telephone: +86 (0)574 8668 5030 E-mail: liuyw@nimte.ac.cn Address: Key Lab of Magnetic Materials and Devices Ningbo Institute of Materials Technology &. Engineering, Chinese Academy of Sciences Zhuangshi Rd. 519, Zhenhai District Ningbo, Zhejiang 315201 China Biography Jul, 2008–Until now Assistant Professor Affiliation: Ningbo Institute of Material Technology and Engineering, Chinese Academy of Science Research Areas: functional materials and devices for storage and sensors Jul, 2007–Jul, 2008 research engineer Affiliation: Fuzhou Photop technology company Research Areas: design of optic-mechanical devices, design of magnetic circuit and switchable magnetic-optic switch Jul, 2005–Jul, 2007 Master of Science Major in: Applied physics Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology Jul, 2001–Jul, 2005 Bachelor Major in: Applied physics and double degree of Electronic and Information Engineering Tianjin University Research Interests Current research focuses on the following areas: Magnetic Sensitive Materials and Sensors; Multiferroic materials and sensors; Current Research Electric-field control of magnetism in multiferroic materials Multiferroics materials, which simultaneously exhibit ferroelectricity and ferromagnetism, have recently stimulated a sharply increasing number of research activities for their scientific interest and significant technological promise in the novel multifunctional devices. The coexistence of several order parameters and the strong coupling between ferroelecity and ferromagnetism will bring out some novel physical phenomena, such as electrical field-control-ferromagnetism and ferromagnetic field-control-ferroelectricity. The multiferroic materials have a widely applications in magnetic sensors. Our research focus on the exploration of new type multiferroic materials and their physical mechanisms using the advanced preparation and micro/nano processing technology and try to realize high sensitivity, high stability, high integrated, low cost and new type magnetic sensors, read-head and other magnetic devices. Publications 1. Qiwei Tian, Minghua Tang, Feiran Jiang, Yiwei Liu, Jianghong Wu, Rujia Zou, Yangang Sun, Zhigang Chen, Runwei Li and Junqing Hu, Large-scaled star-shaped α-MnS nanocrystals with novel magnetic properties. Chem. Commun.47,8100-8102.(2011); 2. Xiaojian Zhu, Fei Zhuge, Mi Li, Kuibo Yin, Yiwei Liu, Zhenghu Zuo, Bin Chen and Run-Wei Li. Microstructure dependence of leakage and resistive switching behaviours in Ce-doped BiFeO3 thin films. J. Phys. D: Appl. Phys.44.415104.(2011); 3. Fei Zhuge, Shanshan Peng, Congli He, Xiaojian Zhu, Xinxin Chen, Yiwei Liu and Run-Wei Li, Improvement of resistive switching in Cu/ZnO/Pt sandwiches by weakening the randomicity of the formation/rupture of Cu filaments, Nanotechnology.22,275204.(2011); 4. Bin Chen, Mi Li, Yiwei Liu, Zhenghu Zuo, Fei Zhuge, Qing-Feng Zhan and Run-Wei Li. Effect of top electrodes on photovoltaic properties of polycrystalline BiFeO3 based thin film capacitors. Nanotechology. 22,195201.(2011); 5. Mi Li, Fei Zhuge, Xiaojian Zhu, Kuibo Yin, Jinzhi Wang, Yiwei Liu, Congli He, Bin Chen and Run-Wei Li*, Nonvolatile resistive switching in metal/La-doped BiFeO3/Pt sandwiches. Nanotechnology, 21,425202(2010). 6. Kuibo Yin, Mi Li, Yiwei Liu, Congli He, Fei Zhuge, Bin Chen, Wei Lu,Xiaoqing Pan, and Run-Wei Li*,Resistance switching in polycrystalline BiFeO3 thin films. Appl. Phys. Lett.97,042101(2010); 7. F. Zhuge, W. Dai, C. L. He, A. Y. Wang, Y. W. Liu, M. Li, Y. H. Wu, P. Cui, and Run-Wei Li *. Nonvolatile resistive switching memory based on amorphous carbon. Appl. Phys. Lett.96,163505(2010); 8. Y. W. Liu, W. B. Mi, E. Y. Jiang, H. L. Bai, Structure, magnetic and transport properties of sputtered Fe/Ge multilayers, Journal of Applied Physics, 102, 063712 , 2007. 9. W. B. Mi, Y. W. Liu, E. Y. Jiang, H. L. Bai,Enhanced Hall effect in FexGe1-x nanocomposite films , Journal of Applied Physics, 103,093713, 2008. Patents 1. Run-Wei Li, Kuibo Yin, Yiwei Liu, Mi Li, Bin Chen; Resistively Random Access Memory based on the bismuth ferrite film and its fabrication. Chinese Patents; Application number: 200910099716.0; 2. Run-Wei Li, Yiwei Liu, Kuibo Yin, Bin Chen, Mi Li; A kind of magnetism storage medium based on the multiferroic films and its write method; Chinese patents; Application number: 200910100338.3. 3. Yiwei Liu, Run-Wei Li, Bin Chen; A method for deceting the antigen; Chinese patents; Application number: 201010176884.8. 4. Yiwei Liu, Run-Wei Li, Bin Chen; A kind of biosensor; Chinese patents; Application number: 201020195995.9 (authorized). 5. Yiwei Liu, Run-Wei Li, Qingfeng Zhan, Conglei Shao, Yuanzhao Wu; A knid of biosensor using immunomagnetic beads, Application number: 201110241688.9 |
