Associate Professor Bin Chen

Personal Details
Telephone: +86 (574) 8668 5030
E-mail: chenbin@nimte.ac.cn
Address: Key Lab of Magnetic Materials and Devices
Ningbo Institute of Materials Technology &. Engineering,
Chinese Academy of Sciences
Zhuangshi Rd. 519, Zhenhai District
Ningbo, Zhejiang
315201
China

Biography
Oct, 2008-Until now Associate Professor
Affiliation: Ningbo Institute of Material Technology and Engineering，Chinese Academy of Sciences, Zhuangshi Avenue 519, Zhenhai, Ningbo 315201
Research Areas: Fabrication, performance and applications research of multiferroic single-phase and composite materials

March, 2007- March, 2008 Postdoctoral Researcher
Research Advisor: Prof. H.W. Gundel, Physics Department, University of Nantes, Nantes Atlantic Universities 2 rue de la Houssinière, Nantes F-44322, France
Research Areas: Dielectric properties of ferroelectric films

Feb, 2005-Feb, 2007 Postdoctoral Researcher
Research Advisor: Prof. T. W. Noh, Department of Physics and Astronomy, Seoul National University, 151-747 Seoul, Korea
Research Areas: Fabrication and properties of ferroelectric thin films

Sep, 2001-Dec, 2004 Doctor of Science Major in: Condensed matter Physics
Institute of Physics, Chinese Academy of Sciences

Sep, 1997-Jul, 2000 Master of Science Major in: Materials science
Yanshan University

Sep, 1993-Jul, 1997 Bachelor of Science Major in: Materials Science
Yanshan University 

Research Interests
Current research focuses on the following areas:
Ferroelectric thin films
Multiferroic thin films
Photovoltaic effects in ferroelectric thin films
Current Research
Topic1 Ferroelectric thin films
We are developing new methods to prepare freestanding ferroelectric thin films and studying the strain effect on the ferroelectricity and dielectric properties.
Topic 2 Multiferroic thin films
Multiferroic thin films have been prepared by pulse laser deposition and chemical solution deposition method. The ferroelectricity, dielectric and resistance switching have been studied.
Topic 3 Photovoltaic effect in ferroelectric thin films
Although the photovoltaic response in ferroelectrics has been discovered for more than half a century, this behaviour has been overlooked due to the small photovoltaic efficiency. We try to improve the photovoltaic effects in ferroelectric films by tuning the internal electric field for the separation of the light-induced carriers in ferroelectric thin films with various methods, such as electrode material optimization, polarization state control, built-in field manipulation, and so on.

Publications
1. Zou Cheng, Chen Bin*, Zhu Xiao-Jian, Zuo Zheng-Hu, Liu Yi-Wei, Chen Yuan-Fu, Zhan Qing-Feng, and Li Run-Wei. Local leakage-current behaviors of BiFeO3 films, Chinese Physics B, In press (2011)
2. Xiaojian Zhu, Fei Zhuge, Mi Li, Kuibo Yin, Yiwei Liu,Zhenghu Zuo, Bin Chen and Run-Wei Li. Microstructure dependence of leakage and resistive switching behaviours in Ce-doped BiFeO3 thin films. J. Phys. D: Appl. Phys. 44, 415104 (2011)
3. Bin Chen, Mi Li, Yiwei Liu, Zhenghu Zuo, Fei Zhuge, Qing-Feng Zhan and Run-Wei Li. Effect of top electrodes on photovoltaic properties of polycrystalline BiFeO3 based thin film capacitors. Nanotechology. 22,195201.(2011).
4. Mi Li, Fei Zhuge, Xiaojian Zhu, Kuibo Yin, Jinzhi Wang, Yiwei Liu, Congli He, Bin Chen and Run-Wei Li*, Nonvolatile resistive switching in metal/La-doped BiFeO3/Pt sandwiches. Nanotechnology, 21,425202(2010).
5. Kuibo Yin, Mi Li, Yiwei Liu, Congli He, Fei Zhuge, Bin Chen, Wei Lu,Xiaoqing Pan, and Run-Wei Li*,Resistance switching in polycrystalline BiFeO3 thin films. Appl. Phys. Lett.97,042101(2010);
6. D. J. Kim, J. Y. Jo, T. H. Kim, S. M. Yang, B. Chen, Y. S. Kim, and T. W. Noh, Observation of inhomogeneous domain nucleation in epitaxial Pb(Zr,Ti)O3 capacitors, Appl. Phys. Lett., 91 132903 (2007).
7. B. Chen, H. Yang, J. Miao, B. Xu, X. G. Qiu, and B. R. Zhao, Leakage current of Pt/((Ba0.7Sr0.3)TiO3 interface with dead layer, J. Appl. Phys. 97 24106 (2005).
8. B. Chen, H. Yang, J Miao, L Zhao, B Xu, X. L. Dong, L. X. Cao, X. G. Qiu, B. R. Zhao, Structural and electrical characteristics of Pb(Zr0.53,Ti0.47)O3 thin films deposited on Si (100) substrate, Chin. Phys. Lett. 22 697 (2005).
9. X. L. Li, B. Chen, H. Y. Jing, H. B. Lu, B. R. Zhao, Z. H. Mai, Q. J. Jia, Experimental evidence of the "dead layer" at Pt/BaTiO3 interface, Appl. Phys. Lett., 87 222905 (2005)
10. B. Chen, H. Yang, L. Zhao, J. Miao, X. Y. Qi, B. Xu, X. G. Qiu, X. F. Duan and B. R. Zhao, Thickness and dielectric constant of dead layer in Pt/(Ba0.7Sr0.3)TiO3/YBa2Cu3O7-X capacitor, Appl. Phys. Lett., 84 583 (2004).
11. H. Yang, B. Chen, J. Miao, L. Zhao, B. Xu, X. L. Dong, L. X. Cao, X. G. Qiu, and B. R. Zhao, Positive temperature of resistivity in Pt/(Ba0.7Sr0.3)TiO3/YBa2Cu3O7-x capacitors, Appl. Phys. Lett., 85 5019 (2004).
12. H. Yang, J. Miao, B. Chen, L. Zhao, B. Xu, X. L. Dong, L. X. Cao, X. G. Qiu, and B. R. Zhao, Abnormal temperature dependence of dielectric constant in (Ba0.7Sr0.3)TiO3 thin films, Appl. Phys. Lett., 85 4106 (2004).
13. J. Miao, W. R. Chen, L. Zhao, B. Chen, H. Yang, W. Peng, X. H. Zhu, B. Xu, L. X. Cao, X. G. Qiu, and B. R. Zhao, Enhanced dielectric properties of (Ba1-xSrx)TiO3 thin film grown on (La1-xSrx)MnO3 bottom layer, J. Appl. Phys. 96 6578 (2004).
14. H. Yang, B. Chen, K. Tao, X. G. Qiu, B. Xu and B. R. Zhao, Temperature- and field-dependent leakage current of Pt/(Ba0.7Sr0.3)TiO3 interface, Appl. Phys. Lett., 83 1611 (2003).
15. H. Yang, K. Tao, B. Chen, X. G. Qiu, B. Xu and B. R. Zhao, Leakage mechanism of (Ba0.7Sr0.3)TiO3 thin films in the low-temperature range, Appl. Phys. Lett., 81 4817 (2002).