Location: Home > Research > Research Groups > Magnetoelectronic Materials &.Devices > Members

Professor Runwei Li

Personal Details
Telephone: +86(574) 8668 5134
Fax: +86(574) 8668 5163
E-mail: runweili@nimte.ac.cn
Address: Key Lab of Magnetic Materials and Devices
Ningbo Institute of Material Technology &. Engineering,
Chinese Academy of Sciences
Zhuangshi Rd. 519, Zhenhai District
Ningbo, Zhejiang
Mar, 2008-Until now Professor, Director of Key Lab of Magnetic Materials and Devices, Chinese Academy of Sciences
Affiliation: Ningbo Institute of Material Technology and Engineering,Chinese Academy of Sciences, Zhuangshi Avenue 519, Zhenhai, Ningbo 315201
Research Areas: magnetoelectronic materials and devices

Feb, 2005-Mar, 2008 Senior Research Follow in International Center for Young Scientists (ICYS), National Institute for Materials Sciences (NIMS), Japan.
Research Areas: magnetoelectronic materials by STM

Oct, 2003-Jan, 2005 AvH (Alexander von Humboldt) Research Fellow
Research Advisor: Prof. Burkard Hillebrands, Department of Physics, Kaiserslautern University of Technology, Germany
Research Areas: magnetoresistive materials

Aug, 2002-Sep, 2003 JSPS Research Fellow
Research Advisor: Prof. Tomoji Kawai, Institute of Scientific and Industrial Research, Osaka University. Osaka, Japan
Research Areas: AFM lithography on perovskite oxide films

Sep, 1997-Jul, 2002 Doctor of Science Major in: Solid state physics
Institute of Physics (IOP), Chinese Academy of Sciences (CAS), China
Sep, 1993-Jul, 1997 Master of Science Major in: Applied physics
Department of Physics, Minzu University of China 

Research Interests
Current research focuses on the following areas:
Advanced functional materials and devices for information storage and sensors, including magnetoresistive materials/structures and devices, multiferroic materials/structures and devices, strain/stress sensitive materials and devices, resistive switching materials and resistive random access memory (RRAM) devices.

Current Research
Topic1 Magnetoresistive Materials/Structures and Devices
Magnetoresistance effect means the change of the resistance under the external magnetic field, which involves Anisotropic Magnetoresistance (AMR), Giant Magnetoresistance (GMR), Tunneling Magnetoresistance (TMR), Colossal Magnetoresistance (CMR), Ballistic Magnetoresistance (BMR), Ballistic Anisotropic Magnetoresistance (BAMR), Tunneling Anisotropic Magnetoresistance (TAMR), and Colossal Anisotropic Magnetoresistance (CAMR) in Perovskite Manganite. Based on magnetoresistance effects, advanced magnetic sensors can develop. Prof Li is devoted to exploring novel magnetoresistive materials/structures, understanding the underlying physics, and designing advanced magnetic sensors.

Topic 2 Multiferroic Materials/Structures and Devices
Multiferroic materials, which simultaneously exhibit ferroelectricity and ferromagnetism, have recently stimulated scientific interest due to their significant technological promise in the novel multifunctional devices. The strong coupling between ferroelectricity and ferromagnetism will bring out some novel physical phenomena, such as ferromagnetism controlled by an electrical field and ferroelectricity controlled by a magnetic field, which has potential applications in magnetic sensors and novel multi-level data storage. Prof. Li is currently exploring new multiferroic materials/structures with high ferroelectric-ferromagnetic coupling at room temperature, and clarifying the physical mechanism of the coupling between ferroelectricity and ferromagnetism, and also developing multiferroic sensors.

Topic 3 RRAM Materials and Devices
Reversible resistance switching can be realized by applying a pulsed voltage in electrode/oxide/electrode sandwiched structure, which can be used for nonvolatile memory, resistive random access memory (RRAM). Compared to traditional memories, RRAM has some advantages, including high storage density, high operation speed, high scaling potential, irradiation resistance, low power consumption, etc. Prof. Li is seeking novel RRAM materials with stable resistive switching performance and RRAM device structures.

Prof. Jiandi Zhang, Louisiana State University, USA
Prof. Wei Lu, The University of Michigan, USA
Prof. Yihong Wu, National University of Singapore, Singapore
Prof. Jun Ding, National University of Singapore, Singapore
Dr. Meiyong Liao, National Institute for Materials Science (NIMS), Japan

Research Grants
1. State Key Project of Fundamental Research of China (973 Program)(2)
2. National Natural Science Foundation of China(5)
3. The Hundred Talent Program of the Chinese Academy of Sciences(1)
4. Zhejiang Province Outstanding Youth Team Project(1)
5. Zhejiang Natural Science Foundations(3)
6. Qianjiang Talent Program of Zhejiang Province(1)
7. Projects of Nonprofit technology & Research in Zhejiang Province(1)
8. Ningbo Natural Science Foundations(5)
9. CAS Major Directional project(1, joint)
10. CAS Innovative Research International Partnership Project(1, joint)
11. The project of Ningbo Innovative Research Team(1, joint)

Zhenghu Zuo, Phd. Student (2009) Research on free-standing multiferroic films
Benlin Hu, Phd. Student (2009) Research on resistive random access memory based polymers
Guohong Dai, Phd. Student (2008) Research on magnetic film
Xiaojian Zhu, Phd. Student (2011) Research on oxide-based resistive random access memories
Huali Yang, Phd. Student (2011) Research on transition-metal oxides and their interface physics
Xinxin Chen, Phd. Student (2011) Research on resistive switchings in composited films
Shanshan Peng, Master Student (2009) Research on resistive switchings of binary oxide
Zhihuan Yang, Master Student (2010) Research on artificial magnetic nanostructures and their transport properties
Xiaoshan Zhang, Master Student (2010) Research on exchange biased effects in flexible systems
Liang Pan, Master Student (2010) Research on composite materials for RRAM
Jianguang Meng, Master Student (2010) Research on multiferroic materials

Selected Publications
1. Qiwei Tian, Minghua Tang, Feiran Jiang, Yiwei Liu, Jianghong Wu, Rujia Zou, Yangang Sun, Zhigang Chen, Run-Wei Li and Junqing Hu. Large-scaled star-shaped α-MnS nanocrystals with novel magnetic properties. Chem. Commun.47,8100-8102.(2011).
2. Xiaojian Zhu, Fei Zhuge, Mi Li, Kuibo Yin, Yiwei Liu,Zhenghu Zuo, Bin Chen and Run-Wei Li*. Microstructure dependence of leakage and resistive switching behaviours in Ce-doped BiFeO3 thin films. J. Phys. D: Appl. Phys.44.415104.(2011).
3. Fei Zhuge, Shanshan Peng, Congli He, Xiaojian Zhu, Xinxin Chen, Yiwei Liu and Run-Wei Li*, Improvement of resistive switching in Cu/ZnO/Pt sandwiches by weakening the randomicity of the formation/rupture of Cu filaments. Nanotechnology.22,275204.(2011).
4. Wei Ning, Zhe Qu, You-Ming Zou, Lang-Sheng Ling, Lei Zhang, Chuan-Ying Xi, Hai-Feng Du, Run-Wei Li*, Yu-Heng Zhang, Giant anisotropic magnetoresistance in bilayered La2-2xSr1+2xMn2O7 (x=0.4) single crystal, Appl. Phys. Lett. 98,212503.(2011).
5. Fei Zhuge, Benlin Hu, Congli He, Xufeng Zhou, Zhaoping Liu, Run-Wei Li*, Mechanism of nonvolatile resistive switching in graphene oxide thin films, Carbon, 49(12):3796-3802.(2011).
6. Bin Chen, Mi Li, Yiwei Liu, Zhenghu Zuo, Fei Zhuge, Qing-Feng Zhan and Run-Wei Li*. Effect of top electrodes on photovoltaic properties of polycrystalline BiFeO3 based thin film capacitors. Nanotechnology. 22,195201.(2011).
7. C. Y. Dong, D. S. Shang, L. Shi, J. R. Sun, B. G. Shen, F. Zhuge, R. W. Li, and W. Chen. Roles of silver oxide in the bipolar resistance switching devices with silver electrode. Appl. Phys. Lett. 98,072107. (2011).
8. Hongjun Liu, Jyh-Pin Chou, Run-Wei Li, Ching-Ming Wei, and Kazushi Miki.Trimeric precursors in the formation of Al magic clusters on Si(111)-7×7 surface. Phys. Rev B. 83, 075405. (2011).
9. Xiuzhen Yu, Run-Wei Li, Toru Asaka, Kazuo Ishizuka, Koji Kimoto and Yoshio Matsui, Relationship between magnetic domain configuration and crystallographic orientation in a colossal magnetoresistive material. Journal of Electron Microscopy. 59,S95-S100.(2010).
10. Mi Li, Fei Zhuge, Xiaojian Zhu, Kuibo Yin, Jinzhi Wang, Yiwei Liu, Congli He, Bin Chen and Run-Wei Li*, Nonvolatile resistive switching in metal/La-doped BiFeO3/Pt sandwiches. Nanotechnology, 21,425202(2010).
11. Kuibo Yin, Mi Li, Yiwei Liu, Congli He, Fei Zhuge, Bin Chen, Wei Lu,Xiaoqing Pan, and Run-Wei Li*,Resistance switching in polycrystalline BiFeO3 thin films. Appl. Phys. Lett.97,042101(2010).
12. F. Zhuge, W. Dai, C. L. He, A. Y. Wang, Y. W. Liu, M. Li, Y. H. Wu, P. Cui, and Run-Wei Li*. Nonvolatile resistive switching memory based on amorphous carbon. Appl. Phys. Lett. 96,163505(2010).
13. D. S. Shang, L. Shi, J. R. Sun, B. G. Shen, F. Zhuge, R. W. Li, and Y. G. Zhao; Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing;Appl. Phys. Lett. 96,072103(2010).
14. J. Wang, F. X. Hu, R. W. Li, J. R. Sun, and B. G. Shen; Strong tensile strain induced charge/orbital ordering in (001)-La7/8Sr1/8MnO3 thin film on 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3; Appl. Phys. Lett. 96,052501(2010).
15. J. Yang, B. Li, J. Wang, L. Chen, R. W.Li, A first-principles study of adhesion of Pt layers to the NiO(100) and IrO2(110) surfaces, J. Phys: Condens. Matt. 22,015003 (2010).
16. X. Z. Yu, Run-Wei Li, T. Asaka, K. Ishizuka, K. Kimoto, and Y. Matsui, Possible origins of the magnetoresistance gain in colossal magnetoresistive oxide La0.69Ca0.31MnO3: Structure fluctuation and pinning effect on magnetic domain walls, Appl. Phys. Lett. 95, 092504 (2009).
17. Run-Wei Li, H. B. Wang, X. Wang, X. Z. Yu, Y. Matsui, Z.H. Cheng, B. G. Shen, E.W. Plummer, and J. Zhang, Anomalously large anisotropic magnetoresistance in a perovskite manganite, Proceeding of the National Academic Sciences (PNAS), 2009, vol. 106, no. 34, 14224–14229.
18. Run-Wei Li*; AFM lithography and fabrication of multifunctional nanostructures with perovskite oxides; International Journal of Nanotechnology, invited review, Vol. 6, No. 12, 1067-1085, (2009).
19. Run-Wei Li*; A. A. Belik, Z. H. Wang, and B. G. Shen, Magnetism, transport, and specific heat of electronically phase-separated Pr0.7Pb0.3MnO3 single crystals, J. Phys. Conden. Mater. 21, 076002, (2009).
20. Run-Wei Li*, Hongjun Liu, J. H. G. Owen, Y. Wakayama, K. Miki, and H. W. Yeom; Al nanocluster arrays on Si(111)-7×7 surfaces: formation process and interactions among clusters; Phys. Rev. B. 76, 075418, (2007).
21. Run-Wei Li*, J. H. G. Owen, S. Kusano, and K. Miki; Dynamic behavior and phase transition of magic Al clusters on Si (111)-7×7 surfaces; Appl. Phys. Lett. 89, 073116 (2006).
22. C. Liu, R. W. Li, A. Belik, D. Golberg, Y. Bando, and H. M. Cheng; Magnetic nanocables – Silicon carbide sheathed with iron oxide doped amorphous silica; Appl. Phys. Lett. 88, 043105. (2006).
23. Run-Wei Li*, Xin Zhou*, Alexei Belik, Jun-ichi Inoue, Kazushi Miki, and Bao-Gen Shen; Current effects and topology of metallic phase in single crystalline Pr0.7Pb0.3MnO3; J. Appl. Phys. 100, 113902 (2006).[Be selected into the Virtual Journal of Nanoscale Science & Technology, volume 14, issue 25 (2006)].
24. Run-Wei Li*, Xin Zhou, Bao-Gen Shen, and Burkard Hillebrands; Process dependence of transport properties in phase-separated Pr0.7Pb0.3MnO3 single crystal; Phys. Rev. B. 71, 092407 (2005).
25. Run-Wei Li*, Teruo Kanki, Hide-Aki Tohyama, Motoyuki Hirooka, Hidekazu Tanaka, and Tomoji Kawai; Nanopatterning of perovskite manganite thin films by atomic force microscope lithography; Nanotechnology, 16, 28 (2005).
26. Run-Wei Li, Teruo Kanki, Motoyuki Hirooka, Akihiko Takagi, Takuya Matsumoto, Hidekazu Tanaka, and Tomoji Kawai; Relaxation of Nanopatterns on Nb-doped SrTiO3 Surface; Appl. Phys. Lett. 84, 2670. (2004).[Be selected into the Virtual Journal of Nanoscale Science & Technology, volume 9, issue 14 (2004)].
27. M. Hirooka, H. Tanaka, R. W. Li, and T. Kawai; Nanoscale modification of electrical and magnetic properties of Fe3O4 thin film by Atomic Force Microscopy lithography; Appl. Phys. Lett. 85, 1811 (2004).[Be selected into the Virtual Journal of Nanoscale Science & Technology, volume 10, issue 13 (2004)].
28. T. Kanki, R. W. Li, Y. Naitoh, H. Tanaka, T. Matsumoto, and T. Kawai, Nano-scale characterization of the ultra thin (La,Ba)MnO3 film with room temperature ferromagnetism; Appl. Phys. Lett. 83, 1184 (2003).
29. J. R. Sun., J. Gao, Y, Fei, R. W. Li, and B. G. Shen; Doping effects on the phase separation in perovskite La0.37-xBixCa0.33MnO3; Phys. Rev. B 67, 144414 (2003).
30. Run-Wei Li*, Zhi-Hong Wang, Wei-Ning Wang, Ji-Rong Sun, Qing-An Li, Shao-Ying Zhang, Zhao-Hua Cheng, Bao-Gen Shen; and Ben-Xi Gu, Large low-field magnetoresistance of phase-separated single crystalline Pr0.7Pb0.3MnO3, Appl. Phys. Lett. 80, 3367 (2002).
31. Run-Wei Li*, Han Xiong, Ji-Rong Sun, Qing-An Li, Zhi-Hong Wang, Jian Zhang, and Bao-Gen Shen, Superparamagnetism and Transport Properties of Ultrafine La2/3Ca1/3MnO3 Powders; J. Phys. condensed matter, 13, 141-148 (2001).
32. S. Y. Zhang, P. Zhao, Z. H. Cheng, R. W. Li, J. R. Sun, H. W. Zhang, and B. G. Shen, Magnetism and giant magnetoresistance of YMn6Sn6-xGax (x =0-1.8) compounds, Phys. Rev. B. 64, 212404(2001).