DENG Gaofeng
Associate Professor
Laboratory of Optoelectronic Information Technology and Devices
Group：High-Efficiency Solar Cells & Wide-Bandgap Semiconductors
denggaofeng@nimte.ac.cn
Research Interests
Oxide-based wide bandgap semiconductor
Biography
2011/06-2015/09 Institute of Information Technology of Guilin University of Electronic Technology, Bachelor of Engineering; 2015/06-2018/09 Guilin University of Electronic Technology, Master of Engineering; 2018/10-2019/03 Saga University, Research student; 2019/04-2022/03 Saga University, Doctor of Engineering, Doctor of Engineering; 2022/04-2024/05 Synchrotron Light Application Center of Saga University, Assistant Professor; 2024/05-present: Ningbo Institute of Materials Technology and Engineering, CAS, Associate Professor
Representative Publications
1.G. Deng, Y. Huang, Z. Chen, K. Saito, T. Tanaka, M. Arita, Q. Guo, Temperature-dependent photoluminescence of r-GeO2 film deposited on r-plane sapphire by synchrotron radiation excitation, Journal of Luminescence, 267, 2024, 120353.
2.G. Deng, K. Saito, T. Tanaka, Q. Guo, Pulsed laser deposition growth of ultra-wide bandgap GeO2 film and its optical properties, Applied Physics Letters, 2021, 119, 182101.
3.G. Deng, Y. Huang, Z. Chen, C. Pan, K. Saito, T. Tanaka, Q. Guo, Heteroepitaxy of (100)-oriented rutile GeO2 film on c-plane sapphire by pulsed laser deposition, Materials Letters, 326, 2022, 132945.
4.G. Deng, Y. Huang, Z. Chen, C. Pan, K. Saito, T. Tanaka, Q. Guo, Yellow emission from vertically integrated Ga2O3 doped with Er and Eu electroluminescent film, Journal of Luminescence, 2021, 235, 118051.
