III-nitride wide bandgap semiconductor, optoelectronic devices, power/RF devices

2015/02-2016/02: Applied Materials Inc. Process Engineer;
2016/02-2020/12: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Associate Professor;
2021/01-present: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Professor

1. Al2O3/in-situ GaON gate dielectrics incorporated GaN MIS-HEMTs with stable VTH and significantly reduced interface state density, T Luo, S Chen, J Li, F Ye, Z Yu, W Xu, J Ye*, W Guo*, Applied Physics Letters, 126, 063503 (2025)

2. Performance enhancement in AlGaN deep ultraviolet light-emitting diodes with step doping n-AlGaN contact layer, Q Chen, Y Wei, J Gao, G Gao, H Liu, M Lou, S Qi, J Ye*, and W Guo*, Optics Express, 33, 5040 (2025)

3. Influence of Growth Rate on Epitaxy of High-Al-content AlGaN via Metal Organic Chemical Vapor Deposition, C Chen, Q Chen, J Gao, C Xu, F Ye, G Gao, L Chen, J Ye*, W Guo*, Journal of Alloys and Compounds 1013, 178597 (2025)

4. Effects of high-temperature thermal annealing on the crystal structure and phase separation in sputtered ScAlN thin films, L Deng, F Meng, J Li, F Ye, W Guo*, J Ye*, Journal of Alloys and Compounds, 997, 174997 (2024)

5. Evolution of Dislocations and Strains in AlN Grown by High-Temperature Metal–Organic Chemical Vapor Deposition, Q Chen, J Gao, C Chen, F Ye, G Gao, C Xu, L Chen, J Ye,* and W Guo*, Crystal Growth & Design, 24, 1784 (2024)

6. Lateral polarity controlled quasi-vertical GaN Schottky barrier diode with sidewalls absence of plasma damages, Y Dai, Z Zhao, T Luo, Z Yu, W Guo*, J Ye*, Applied Physics Letters, 123, 252110 (2023)

7. 193 nm laser annealing on p-GaN with enhanced hole concentration and wall-plug-efficiency in deep ultraviolet LED, C Xu, K Liu, Z Yu, Z Zhao, C Chen, J Gao; Z Yang, J Ye*, W Guo*, Applied Physics Letters, 123, 182103 (2023)

8. Self-powered MSM solar-blind AlGaN photodetector realized by in-plane polarization modulation, C Guo, J Zhang, S Xia, L Deng, K Liu, Z Yang, B Cheng, B Sarkar, W Guo*, and J Ye, Optics Letters 48,4769 (2023)

9. A distinctive architecture design of lateral pn type GaN ultraviolet photodetectors via a numerical simulation, S Xia, B Li, Z Yang*, W Guo*, and J Ye*, Journal of Physics D: Applied Physics 56, 345105 (2023)

10. Annihilation of Nanoscale Inversion Domains in Nitrogen-Polar AlN under High-Temperature Annealing, W Guo, L Chen, H Xu, Q Chen, K Liu, T Luo, J Jiang, H Wu, G Chen, H Lu, J Ye*, Crystal Growth and Design, 23, 229 (2022)

11. Implementation of electron restriction layer in n-AlGaN toward balanced carrier distribution in deep ultraviolet light-emitting-diodes, K Liu, L Chen, T Luo, Z Zhao, P Ouyang, J Zhang, Q Chen, B Zhou, S Qi, H Xu, Z Yang, W Guo*, and J Ye*, Applied Physics Letters 121, 241105 (2022)

12. Polarization modulation of 2DEG toward plasma-damage-free GaN HEMT isolation, Y Dai, W Guo*, L Chen, H Xu, F AlQatari,C Guo, X Peng, K Tang, C Liao, X Li*, and J Ye*, Applied Physics Letters, 121, 012104 (2022)

13. Conductive SiO2/HfO2 distributed Bragg reflector achieved by electrical breakdown and its application in GaN-based light emitters, M Cui#, C Guo#, Z Yang, L Chen, Y Dai, H Xu, W Guo*, and J Ye*, Journal of Applied Physics, 131, 045301 (2022)

14. Structural and optical properties of AlN sputtering deposited on sapphire substrates with various orientations, X Peng#, J Sun#, H Liu, L Li, Q K Wang, L Wu, W Guo*, F Meng*, L Chen, F Huang, and J C Ye*, Journal of Semiconductors, 43, 022801 (2022)

15. Self-powered ultraviolet MSM photodetectors with high responsivity enabled by a lateral n+/n- homojunction from opposite polarity domains, C Guo, W Guo,* Y Dai, H Xu, L Chen, D Wang, X Peng, K Tang, H Sun, J Ye, Optics Letters, 46, 3203 (2021)

16. Annihilation and Regeneration of Defects in (1122) Semipolar AlN via High-Temperature Annealing and MOVPE Regrowth. L Chen, W Lin, H Chen, H Xu, C Guo, Z Liu, J Yan, J Sun, H Liu, J Wu, W Guo,* J Kang,* and J Ye*, Crystal Growth & Design, 21, 2911 (2021)

17. Direct demonstration of carrier distribution and recombination within step-bunched UV LED, H Xu, J Jiang, L Chen, J Hoo, L Yan, S Guo, C Shen, Y Wei, H Shao, Z Zhang, W Guo*, J Ye*, Photonics Research, 9, 764 (2021)