Focused on the fundamental and applied aspects of surface and interface physics in spin–orbit electronics, including:
1. Electronic structure characterization and engineering of oxide thin films and heterostructures — Fabrication of high-quality heterostructures via MBE and PLD, and precise interpretation of their band structures and interfacial effects using ARPES.
2. Charge–spin–orbit conversion mechanisms — Systematic investigation of spin–orbit coupling interactions among charge, spin, and orbital degrees of freedom, and their influence on the performance of novel magnetic memory and logic devices.
3. Spintronic device design based on spin–orbit torque effects — Development of efficient and stable spintronic device platforms, enabling advances in next-generation memory and logic.

Education:
• 2022.9-2006.7: Dalian University of Technology, P. R. China, B.S. Physics.
• 2006.9-2011.7: Institute of Physics, Chinese Academy of Sciences, Ph.D. Physics.

Professional Experiences:
• 2011.8-2014.5: Vienna University of Technology, Vienna, Austria, Postdoctoral researcher.  
• 2013.4-2013.5: University of Twente, Netherlands, Visiting researcher.
• 2014.6-2017.3: Paul Scherrer Institute, Swiss Light Source, Switzerland, Postdoctoral Fellow.
• 2017.3-present: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Science, Professor.

• Young Investigator Award of the 3rd Functional Oxide Thin Films for Advanced Energy and Information Technology Conference, 2017
• Director Awards for excellent research, Chinese Academy of Sciences, 2009
• Excellent Graduate Awards, Dalian University of Technology, China (2006)
• Second Class Prize of the National Awards, China (2003)

1. S. Peng, X. Zheng, S. Li, B. Lao, Y. Han, Z. Liao, H. Zheng, Y. Yang, T. Yu, P. Liu, Y. Sun, X.-Q. Chen, S. Peng, W. Zhao, R.-W. Li*, and Z. Wang*, “Unconventional scaling of the orbital Hall effect” Nat. Mater. 24, 1749 (2025)
2. Z. Lu, X. Bai, B. Lao, X. Zheng, H. Deng, Z. Fan, R.-W. Li*, and Z. Wang*, “Heterogeneous Integration of Single‐Crystal SrRuO3 Films with Large Spin Hall Conductivity on Silicon for Spintronic Devices” Adv. Funct. Mater. 35, 2500755 (2025)
3. Z. Wang*, S. McKeown Walker, Y. Wang, Z. Ristic, F. Y. Bruno, A. Tamai, A. Varykhalov, T. Kim, M. Hoesch, N. C. Plumb, M. Shi, U. Diebold, J. Mesot, T. P. Devereaux, M. Radovic, and F. Baumberger*, “Tailoring the nature and strength of electron-phonon interactions in the SrTiO3(001) 2D electron liquid”, Nat. Mater. 15, 835 (2016)
4. Z. Wang, Z. Zhong, X. Hao, S. Gerhold, B. Stöger, M. Schmid, J. SánchezBarriga, A. Varykhalov, C. Franchini, K. Held, and U. Diebold*, ”Anisotropic two-dimensional electron gas at SrTiO3(110)”, Proc. Natl. Acad. Sci. 111, 3933 (2014)
5. Z. Wang, F. Li, S. Meng, J. Zhang, E.W. Plummer, U. Diebold, and J. Guo*,” Strain-induced defect superstructure on the SrTiO3(110) surface”, Phys. Rev. Lett. 111, 056101 (2013)