The Electrochemical Society 2012 Fall Meeting-PRIME 2012（The 222nd ECS Meeting） was held in Honolulu, Hawaii in October 7-12, 2012. 

Prof. Hong Tao CAO, Prof. Qing WAN, and Associate Prof. Li Qiang ZHU from NIMTE attended the meeting at the session E16-Thin-Film Transistor 11. Attendees at this session are the specialists from the universities, research institutes and industries working on thin-film transistors (TFTs).

 

Prof. Cao gave an oral presentation titled Ambipolar SnO thin-film transistors and inverters. In the presentation, the importance and challenges were discussed for the Ambipolar TFTs in terms of multi-functional devices applications and processing simplification. The presentation focused on Ambipolar SnO TFTs, fabrications and electrical performance.

 

Prof. Wan gave an oral presentation titled Dual In-Plane-Gate Thin-Film Transistors Gated by Chitosan on Paper Substrates. The electrical double layer (EDL) effects in the Chitosan layer were discussed in detail. The flexible EDL oxide TFTs have been fabricated with a novel low cost process. The EDL TFTs could work in low-voltages (<2V), which exhibit its potential application in portable devices, neuron devices, and etc.

Associate Prof. Zhu’s presentation was entitledLaser patterned junctionless in-plane-gate oxide thin-film transistors arrays. In his presentation, he discussed the proton conductivities and the corresponding mechanisms of nanogranular SiO2 films; the electrical double layer (EDL) effects; and the laser scribing process to fabricate the TFTs arrays. The Logic operations were also discussed.

The three presentations attracted a heated discussion. The results were included in ECS Transactions, Thin Film Transistor 11 Vol.50. (Liqiang Zhu reports.)